| PART |
Description |
Maker |
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| BUL65A |
ADVANCED DISTRIBUTED BASE DESIGN
|
Seme LAB
|
| RU3050L |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| RU55L18R |
P-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| RU1H36L |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| RU304B |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL54ASMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL55B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
|
